Path:OKDatasheet > Halbleiter Datenblatt > Power Innovations Datenblatt > TISP3260F3DR
TISP3260F3DR spec: Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection
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TISP3260F3DR Datenblatt und Spezifikationen
Hersteller : Power Innovations
Verpacken : DR
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 502 KB
Application : Dual Symmetrical Overvoltage TISP for 3 Wire Ground Backed Ringer Protection
TISP3260F3DR PDF-Download