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IRF820FI spec: N-channel enhancement mode power MOS transistor, 500V, 2.2A
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IRF820FI Datenblatt und Spezifikationen
Hersteller : ST Microelectronics
Verpacken : ISOWATT220
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 185 KB
Application : N-channel enhancement mode power MOS transistor, 500V, 2.2A
IRF820FI PDF-Download