BDX54C spec: PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V

Ähnliche BDX54C

BDX53
- NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V
BDX53A
- NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
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BDX53C
- NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
BDX54
- PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V
BDX54A
- PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V

BDX54C Datenblatt und Spezifikationen

Hersteller : WingShing

Verpacken : TO-220

Pins : 3

Temperatur : Min 0 °C | Max 0 °C

Größe : 27 KB

Application : PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V