Path:OKDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > BUT11A
BUT11A spec: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Path:OKDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > BUT11A
BUT11A spec: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Hersteller : WingShing
Verpacken : TO-220
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 24 KB
Application : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.