Ähnliche BUT12

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
BUT12
- NPN silicon diffused power transistor. For switching power circuits
BUT12A
- NPN silicon diffused power transistor. For switching power circuits
BUT12AF
- NPN silicon diffused power transistor. For switching power circuits

BUT12 Datenblatt und Spezifikationen

Hersteller : WingShing

Verpacken : TO-220

Pins : 3

Temperatur : Min 0 °C | Max 0 °C

Größe : 71 KB

Application : NPN silicon diffused power transistor. For switching power circuits