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MJE13003 spec: NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
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- NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
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MJE13003 Datenblatt und Spezifikationen
Hersteller : WingShing
Verpacken : TO-126
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 29 KB
Application : NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V
MJE13003 PDF-Download