Path:OKDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > MJE13005B
MJE13005B spec: NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V
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- MJE13005B
- NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V
MJE13005B Datenblatt und Spezifikationen
Hersteller : WingShing
Verpacken : TO220AB
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 73 KB
Application : NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V
MJE13005B PDF-Download