WMBT5401LT1 spec: PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V

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WMBT5401LT1 Datenblatt und Spezifikationen

Hersteller : WingShing

Verpacken : SOT-23

Pins : 3

Temperatur : Min 0 °C | Max 0 °C

Größe : 37 KB

Application : PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V