WMBT5551LT1 spec: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

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WMBT5551LT1 Datenblatt und Spezifikationen

Hersteller : WingShing

Verpacken : SOT-23

Pins : 3

Temperatur : Min 0 °C | Max 0 °C

Größe : 39 KB

Application : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V