Path:okDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > WingShing-5

D1148 BUT11 HC-49/S 2SD1128 WMBT3904 78L12ACZ MJ11015 SMA4001 WMBT3906 2SA1301 2SC3854 78L18ACZ SR160 MJE13002A LM358N 2SD1047 MJ10007 TIP142 2SA1307 TIP36C 2SC3856 2SC3039 WS82C55AQ 2SB633 2SA1102 BU526A MELFSMA4002 2SD1294

WingShing Datenblätter Katalog-5

Teil noHerstellerApplication
WMBT3906 WingShingPNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
KBPC3501 WingShingSingle-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V
2SD1148 WingShingNPN planar silicon transistor. Audio power amplifier, DC to DC converter
BUT11 WingShingNPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
HC-49/S WingShingCrystal unit. Nominal frequency 3.579545-27.00MHz
2SD1128 WingShingNPN silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
WMBT3904 WingShingNPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
78L12ACZ WingShingPositive-voltage regulator. Output current up to 100mA
MJ11015 WingShingPNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers
SMA4001 WingShingSurface mount silicon rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V.
WMBT3906 WingShingPNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
2SA1301 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
2SC3854 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
78L18ACZ WingShingPositive-voltage regulator. Output current up to 100mA
SR160 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 60V. Max RMS bridge input voltage 42V. Max DC blocking voltage 60V.
MJE13002A WingShingSilicon NPN triple diffused MESA type. Electronic transformers, power switching circuit. Vcbo=600V, Vceo=400V, Vebo=9V
LM358N WingShingDual operation amplifier
2SD1047 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
MJ10007 WingShingNPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers.
TIP142 WingShingNPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
2SA1307 WingShingPNP epitaxial silicon transistor. Power amplifier vertical deflection output.
TIP36C WingShingPNP planar silicon transistor. Audio power amplifier. DC to DC converter. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -6V
2SC3856 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
2SC3039 WingShingSilicon epitaxial planar transistor. High power, high frequency, audio and general purpose
WS82C55AQ WingShingCMOS programmable peripheral interface. Speed 8MHz
2SB633 WingShingPNP epitaxial silicon transistor. Low frequency power amplifier.
2SA1102 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
BU526A WingShingNPN silicon transistor. Switcing regulators. PWM inverters. Solenoid and relay drivers.
MELFSMA4002 WingShingSurface mount silicon rectifier. Max reccurent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V
2SD1294 WingShingNPN silicon darlington transistor. Switching regulators, PWM inverters, solenoid and relay drivers

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