Path:okDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > WingShing-1
04 BU406D BU406 WS628512LLST KBPC3510 2SC5416LS BDX54B LM393M 2SA940 KA2411 MJ15015 BDX54B LM393M P600A 2SC2233 TIP42B 2N3771 2SA1105 BDX53A FR106 2SD1650 MELFSMA5817 2SD313 2SA1492 2SD1433 KA3842AM 2SD1710 LM317LZ
Teil no | Hersteller | Application |
---|---|---|
2SD850 | WingShing | Silicon diffused power transistor. |
2SC1172 | WingShing | NPN triple diffused planar silicon transistor. Color TV horizontal output applications (no dapmer diode) |
2SA1104 | WingShing | Silicon epitaxial planar transistor. |
BU406D | WingShing | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V. |
BU406 | WingShing | NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
WS628512LLST | WingShing | Very low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70ns |
KBPC3510 | WingShing | Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS bridge input voltage 700V. Maximum DC blocking voltage 1000V |
2SC5416LS | WingShing | NPN silicon transistor. High voltage power switching applications |
BDX54B | WingShing | PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V |
LM393M | WingShing | Dual differential comparator |
2SA940 | WingShing | PNP epitaxial silicon transistor. Power amplifier vertical deflection output. |
KA2411 | WingShing | Telephone tone ringer. Adjustable for reduced supply initiation current |
MJ15015 | WingShing | Silicon epitaxial planar transistor. |
BDX54B | WingShing | PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V |
LM393M | WingShing | Dual differential comparator |
P600A | WingShing | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50V |
2SC2233 | WingShing | NPN epitaxial silicon transistor. Low frequency power amplifier |
TIP42B | WingShing | PNP epitaxial silicon transistor. Medium power linear and switching applications Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V |
2N3771 | WingShing | NPN planar silicon transistor. Audio power amplifier DC to DC converter |
2SA1105 | WingShing | PNP planar silicon transistor. Audio power amplifier DC to DC converter. |
BDX53A | WingShing | NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V |
FR106 | WingShing | Fast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V. |
2SD1650 | WingShing | Silicin diffused power transistor. Horizontal deflection circuits of color TV receivers |
MELFSMA5817 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V |
2SD313 | WingShing | NPN epitaxial silicon transistor. Low frequency power amplifier |
2SA1492 | WingShing | PNP planar silicon transistor. Audio power amplifier DC to DC converter. |
2SD1433 | WingShing | NPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode) |
KA3842AM | WingShing | Linear integrated circuit |
2SD1710 | WingShing | Silicon diffused power transistor. Horizontal deflection circuits of color TV receivers |
LM317LZ | WingShing | 3-terminal adjustable regulator. Output voltage 1.2V to 27V. |