Path:okDatasheet > Halbleiter Datenblatt > WingShing Datenblatt > WingShing-2
Q 1N5404 MJ10001 79L05CPK 2SC4596E 2SC1875 WS82C55A-5P SR150 2SD1403 KBPC1502 P600B TIP146 WS628512LLT WS7805DP MJE13003 BU508D 9013 MJ11012 SMD0705 2SD1546 2SC3552 WS337L TIP42C TIP141 78L15CPK 1N5392 2SD880 WMBT5551LT1
Teil no | Hersteller | Application |
---|---|---|
SS16 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 60V. Max RMS bridge input voltage 42V. Max DC blocking voltage 60V. |
SS18 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 80V. Max RMS bridge input voltage 56V. Max DC blocking voltage 80V. |
WS82C55A-5Q | WingShing | CMOS programmable peripheral interface. Speed 5MHz |
1N5404 | WingShing | Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 3.0A |
MJ10001 | WingShing | NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers. |
79L05CPK | WingShing | Negative-voltage regulator. Output current up to 100mA |
2SC4596E | WingShing | Silicon epitaxial plannar transistor. High frequency, NPN high power |
2SC1875 | WingShing | NPN tripple diffused planar silicon transistor. Color TV horizontal output applications(no damper diode) |
WS82C55A-5P | WingShing | CMOS programmable peripheral interface. Speed 5MHz |
SR150 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 50V. Max RMS bridge input voltage 35V. Max DC blocking voltage 50V. |
2SD1403 | WingShing | NPN silicin diffused power transistor. Horizontal deflection circuites of color TV |
KBPC1502 | WingShing | Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
P600B | WingShing | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100V |
TIP146 | WingShing | PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V |
WS628512LLT | WingShing | Very low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70ns |
WS7805DP | WingShing | Positive-voltage 3-terminal regulator. Output current up to 1.5A |
MJE13003 | WingShing | NPN silicon transistor. V(BR)cbo=700V, V(BR)ceo=400V, V(BR)ebo=9V |
BU508D | WingShing | Silicon diffused power transistor. Horizontal deflection circuites of color TV receivers. |
9013 | WingShing | NPN silicon transistor. Power dissipation 0.625W (Tamb=25deg.C). Collector current 0.5A. Collector-base voltage 45V. |
MJ11012 | WingShing | NPN silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
SMD0705 | WingShing | Crystal unit. Nominal frequency 10.00-27.00MHz |
2SD1546 | WingShing | NPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode) |
2SC3552 | WingShing | Silicon epitaxial planar transistor. NPN high frequenxcy, high power |
WS337L | WingShing | 3-terminal adjustable regulator. Output voltage 1.2V to 37V. |
TIP42C | WingShing | PNP silicon power transistor. Medium power linear and switching applications Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V |
TIP141 | WingShing | NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V |
78L15CPK | WingShing | Positive-voltage regulator. Output current up to 100mA |
1N5392 | WingShing | Silicon rectifier. Max reccurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 1.5A |
2SD880 | WingShing | NPN epitaxial silicon transistor. Low frequency power amplifier. |
WMBT5551LT1 | WingShing | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V |