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Um den spezifischen EXICONDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit EXICON Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
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| Teil no | Application |
|---|---|
| EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| ECM-300H | 300W RMS class D audio amplifier module. |
| EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| ECF10P25 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| EC-20P16 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
| EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
| ECM-600H | 600W RMS class D audio amplifier module. |
| EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
| EC-20P20 | P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| EC-10P20 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N20 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. |
| EC-10N16 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| ECF10N25 | N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. |
| EC-20N20 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range. |
| EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
| EC-10P16 | P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range. |
| EC-20N16 | N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range. |
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