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IRF820S spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF820S
IRF820S spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
Hersteller : IR
Verpacken : SMD-220
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 189 KB
Application : HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A