Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF830A
IRF830A spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
Ähnliche IRF830A
- IRF820
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AL
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF830A
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
- IRF840
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A
IRF830A Datenblatt und Spezifikationen
Hersteller : IR
Verpacken :
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 118 KB
Application : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830A PDF-Download