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IRF830AS spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
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IRF830AS Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : DDPak
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 170 KB
Application : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830AS PDF-Download