| Teil no | Hersteller | Application |
|---|
| ZMM55-C3V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-5% tolerance. |
| 1N5931B | JGD | 1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-5% tolerance. |
| 3EZ43D | JGD | 3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-20% tolerance. |
| P4KE16C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional. |
| SK110 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| HER108L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ16CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional. |
| 1A5G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4729A | JGD | 1W zener diode. Zener voltage 3.6V. |
| SK14 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A. |
| P6KE130C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional. |
| 1N4106C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 12V. 2% tolerance. |
| 2W08 | JGD | Single phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. |
| SMBJ7.5 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 10.3 V (max). Test current 1.0 mA. |
| SMBJ5915 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-20% tolerance. |
| 1N4744D | JGD | 1W zener diode. Nominal zener voltage 15V. 1% tolerance. |
| 1N4731A | JGD | 1W zener diode. Zener voltage 4.3V. |
| 1N5913D | JGD | 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-1% tolerance. |
| P4KE10C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. Bidirectional. |
| 3EZ10D5 | JGD | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-5% tolerance. |
| 1N4133 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 87V. |
| ZMM55-D7V5 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.0-7.9 V. Test current 5 mA. +-20% tolerance. |
| SF34G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 3.0 A. |
| SMAJ17 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. |
| SMBJ5939D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 39 V. Test current 9.6 mA. +-1% tolerance. |
| ZMM5239D | JGD | Surface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-20% tolerance. |
| SMAJ70 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. |
| 1N5537B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| 1N4118C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 27V. 2% tolerance. |
| 3EZ120D1 | JGD | 3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-1% tolerance. |
