| Teil no | Hersteller | Application |
|---|
| ZMM5236D | JGD | Surface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-20% tolerance. |
| 1N5546A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| SMAJ8.5C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.5 V. Bidirectional. |
| UF4001G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. |
| P4KE18C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. Bidirectional. |
| ZMM5232C | JGD | Surface mount zener diode. Nominal zener voltage 5.6 V. Test current 20 mA. +-10% tolerance. |
| SMAJ20C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V. Bidirectional. |
| HER208G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5942D | JGD | 1.5 W, silicon zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
| FR101G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| SFR301 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 3.0 A. |
| HER101G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5913 | JGD | 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-20% tolerance. |
| 3EZ17D10 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-10% tolerance. |
| SMBJ6.5A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.22 V (min), 7.98 V (max). Test current 10.0 mA. |
| KBP101G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
| 3EZ150D5 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-5% tolerance. |
| P6KE160 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. |
| SMBJ5956B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-5% tolerance. |
| ZMM5261C | JGD | Surface mount zener diode. Nominal zener voltage 47 V. Test current 2.7 mA. +-10% tolerance. |
| SMBJ5916 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.3 V. Test current 87.2 mA. +-20% tolerance. |
| 1N4007G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. |
| KBP100G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| GS1B | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 100V. |
| P6KE130A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. |
| ZMM55-A39 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-1% tolerance. |
| SMBJ110 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 122 V (min), 149 V (max). Test current 1.0 mA. |
| 1N5932C | JGD | 1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-2% tolerance. |
| 3EZ75D5 | JGD | 3 W, silicon zener diode. Nominal voltage 75 V, current 10 mA, +-5% tolerance. |
| ZMM55-A3V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-1% tolerance. |
