Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-116
742D ZMM5235B R1500F P6KE180C 1N5938A BY396 SMBJ11A SMAJ150 3EZ27D1 1N5526 1N751 SMBJ5932 SMBJ33CA KBU601 1N5915 SF21 ZMM5221D 1N5956 1N5916D SMAJ120A SF15LG SMAJ90CA BA779 1N5527A 1N4748D 1N5943 1N4119C SMAJ9.0CA
Teil no | Hersteller | Application |
---|---|---|
1N4759C | JGD | 1W zener diode. Nominal zener voltage 62V. 2% tolerance. |
ZMM5249B | JGD | Surface mount zener diode. Nominal zener voltage 19 V. Test current 6.6 mA. +-5% tolerance. |
1N4742D | JGD | 1W zener diode. Nominal zener voltage 12V. 1% tolerance. |
ZMM5235B | JGD | Surface mount zener diode. Nominal zener voltage 6.8 V. Test current 20 mA. +-5% tolerance. |
R1500F | JGD | High voltage fsat recovery rectifier. Max recurrent peak reverse voltage 1500 V. Max average forward rectified current 0.5A. |
P6KE180C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional. |
1N5938A | JGD | 1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-10% tolerance. |
BY396 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
SMBJ11A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 12.2 V (min), 13.5 V (max). Test current 1.0 mA. |
SMAJ150 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. |
3EZ27D1 | JGD | 3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-1% tolerance. |
1N5526 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-20% tolerance. |
1N751 | JGD | 500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-10% standard tolerance. |
SMBJ5932 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-20% tolerance. |
SMBJ33CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 36.7 V (min), 40.6 V (max). Test current 1.0 mA. Bidirectional. |
KBU601 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
1N5915 | JGD | 1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-20% tolerance. |
SF21 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 2.0 A. |
ZMM5221D | JGD | Surface mount zener diode. Nominal zener voltage 2.4 V. Test current 20 mA. +-20% tolerance. |
1N5956 | JGD | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-20% tolerance. |
1N5916D | JGD | 1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-1% tolerance. |
SMAJ120A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. |
SF15LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
SMAJ90CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. Bidirectional. |
BA779 | JGD | Surface mount switching diode. |
1N5527A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
1N4748D | JGD | 1W zener diode. Nominal zener voltage 22V. 1% tolerance. |
1N5943 | JGD | 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-20% tolerance. |
1N4119C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 28V. 2% tolerance. |
SMAJ9.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional. |