| Teil no | Hersteller | Application |
|---|
| SS12 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current 1.0 A. |
| RL201G | JGD | Glass passivated rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
| SMBJ24C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 32.6 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ110D4 | JGD | 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-4% tolerance. |
| KBU606G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V. |
| P6KE47C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional. |
| SMBJ5917B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-5% tolerance. |
| 2W01G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100 V. |
| P6KE400A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. |
| SF13LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A. |
| HA14 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| ZMM5244A | JGD | Surface mount zener diode. Nominal zener voltage 14 V. Test current 9.0 mA. +-3% tolerance. |
| SMAJ51 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. |
| 3EZ56D5 | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-5% tolerance. |
| SMAJ70A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. |
| KBPC610G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| P4KE13C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. Bidirectional. |
| 3EZ56D4 | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-4% tolerance. |
| 1N5949C | JGD | 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-2% tolerance. |
| 3EZ11D1 | JGD | 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-1% tolerance. |
| SMBJ5943B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-5% tolerance. |
| SMAJ58C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. Bidirectional. |
| 1N4736 | JGD | 1W zener diode. Nominal zener voltage 6.8V. 10% tolerance. |
| SMAJ9.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional. |
| FR606G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| KBU1000 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| ZMM5250B | JGD | Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-5% tolerance. |
| SMBJ13 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 17.6 V (max). Test current 1.0 mA. |
| FS2G | JGD | 1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 400V. |
| P4KE51 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. |
