| Teil no | Hersteller | Application |
|---|
| 1N5528C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-2% tolerance. |
| SR105 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
| 1N5941 | JGD | 1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance. |
| MR858 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N5937A | JGD | 1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-10% tolerance. |
| SK12 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A. |
| SF15 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| SMBJ150CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 185 V (max). Test current 1.0 mA. Bidirectional. |
| TMPD914 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 10mA. |
| SMBJ10CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 11.1 V (min), 12.3 V (max). Test current 1.0 mA. Bidirectional. |
| 1N4130D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 68V. 1% tolerance. |
| KBP202G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| 1N975 | JGD | 0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-20% tolerance. |
| ES2A | JGD | 2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 50 V. |
| P4KE350 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. |
| SMBJ130 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 176 V (max). Test current 1.0 mA. |
| SMBJ5918A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-10% tolerance. |
| 1A7G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N4625C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 5.1V. 2% tolerance. |
| 3EZ36D3 | JGD | 3 W, silicon zener diode. Nominal voltage 36 V, current 21 mA, +-3% tolerance. |
| SMAJ18 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. |
| 3EZ68D2 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-2% tolerance. |
| 1N4101D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. 1% tolerance. |
| 1N966C | JGD | 0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-2% tolerance. |
| 1N5541B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| 1N4732 | JGD | 1W zener diode. Nominal zener voltage 4.7V. 10% tolerance. |
| SMAJ110A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. |
| 3EZ24D5 | JGD | 3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-5% tolerance. |
| KBPC1004G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| 1N5392G | JGD | 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
