Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-37
BZX84C13 1N4127 3EZ180D2 ZMM55-C10 HA17G UF5408 SMAJ48A ZMM5247D 3EZ47D3 1N4132D 1N4761D SMAJ36A 1N4372A 1N5948 1N4007L 1N974B 1N4005G 1N754A 1N959C SFR601 SMBJ7.0 SMAJ33 SMBJ14 P4KE47C 1N4746C SMBJ5936B ES1B
Teil no | Hersteller | Application |
---|---|---|
S2K | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A. |
KBJ408G | JGD | Glass passivated single-phase bridge rectifier. Forward current 4.0 A. Max recurrent peak reverse voltage 800V. |
SMAJ160C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
BZX84C13 | JGD | 350mW zener diode, 13V |
1N4127 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. |
3EZ180D2 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance. |
ZMM55-C10 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 9.4-10.6 V. Test current 5 mA. +-5% tolerance. |
HA17G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
UF5408 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A. |
SMAJ48A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. |
ZMM5247D | JGD | Surface mount zener diode. Nominal zener voltage 17 V. Test current 7.4 mA. +-20% tolerance. |
3EZ47D3 | JGD | 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-3% tolerance. |
1N4132D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 82V. 1% tolerance. |
1N4761D | JGD | 1W zener diode. Nominal zener voltage 75V. 1% tolerance. |
SMAJ36A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. |
1N4372A | JGD | 500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
1N5948 | JGD | 1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-20% tolerance. |
1N4007L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. |
1N974B | JGD | 0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-5% tolerance. |
1N4005G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 600V. |
1N754A | JGD | 500mW, silicon zener diode. Zener voltage 6.8 V. Test current 20 mA. +-5% tolerance. |
1N959C | JGD | 0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-2% tolerance. |
SFR601 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 6.0 A. |
SMBJ7.0 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 9.51 V (max). Test current 10.0 mA. |
SMAJ33 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. |
SMBJ14 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 15.6 V (min), 19.1 V (max). Test current 1.0 mA. |
P4KE47C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V. Bidirectional. |
1N4746C | JGD | 1W zener diode. Nominal zener voltage 18V. 2% tolerance. |
SMBJ5936B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-5% tolerance. |
ES1B | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 100 V. |