| Teil no | Hersteller | Application |
|---|
| P6KE13A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. |
| KBJ604G | JGD | Glass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 400V. |
| 1N4747 | JGD | 1W zener diode. Nominal zener voltage 20V. 10% tolerance. |
| 2W005G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
| ZMM55-A30 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 28-32 V. Test current 5 mA. +-1% tolerance. |
| BAS35 | JGD | Surface mount switching diode. Max forward voltage 0.84V at 50mA. |
| ES1G | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 400 V. |
| SF12LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| FR206 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| ZMM5242A | JGD | Surface mount zener diode. Nominal zener voltage 12 V. Test current 20 mA. +-3% tolerance. |
| 1N5941C | JGD | 1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance. |
| 1N5933D | JGD | 1.5 W, silicon zener diode. Zener voltage 22V. Test current 17 mA. +-1% tolerance. |
| 1N755A | JGD | 500mW, silicon zener diode. Zener voltage 7.5 V. Test current 20 mA. +-5% tolerance. |
| FR605 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| KBU810 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5929 | JGD | 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance. |
| KBJ610G | JGD | Glass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 1000V. |
| SMAJ78CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. Bidirectional. |
| SMAJ6.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. |
| 1N4728C | JGD | 1W zener diode. Nominal zener voltage 3.3V. 2% tolerance. |
| 1N5542B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| HER105L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| FR605G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5822 | JGD | 3.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 40 V, max RMS voltage 28 V, max DC blocking voltage 40 V. |
| P6KE9.1A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. |
| 3EZ75D | JGD | 3 W, silicon zener diode. Nominal voltage 75 V, current 10 mA, +-20% tolerance. |
| 1N5928A | JGD | 1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-10% tolerance. |
| 3EZ5.6D3 | JGD | 3 W, silicon zener diode. Nominal voltage 5.6 V, current 134 mA, +-3% tolerance. |
| 1N5945A | JGD | 1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
| KBU1010 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
