| Teil no | Hersteller | Application |
|---|
| 1N4104 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 10V. |
| 3EZ27D5 | JGD | 3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-5% tolerance. |
| ZMM5252C | JGD | Surface mount zener diode. Nominal zener voltage 24 V. Test current 5.2 mA. +-10% tolerance. |
| 1N5536D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| P4KE30CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional. |
| 1N960 | JGD | 0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-20% tolerance. |
| 3EZ15D | JGD | 3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-20% tolerance. |
| SMBJ5941 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance. |
| ES2C | JGD | 2.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V. |
| ZMM55-B13 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 12.4-14.1 V. Test current 5 mA. +-2% tolerance. |
| SMAJ13A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. |
| HA13 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| 1N4371 | JGD | 500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-10% standard tolerance. |
| P6KE110CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
| 1N962A | JGD | 0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-10% tolerance. |
| P6KE33CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional. |
| 1N4747A | JGD | 1W zener diode. Zener voltage 20V. |
| SMAJ48 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. |
| 1N5951 | JGD | 1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance. |
| 1N5915D | JGD | 1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-1% tolerance. |
| KBPC810G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| UF4005 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A. |
| HER603 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| P4KE36C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional. |
| 1N759C | JGD | 500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-2% tolerance. |
| P4KE39A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. |
| S2D | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.5 A. |
| P4KE350A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. |
| P6KE43C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. Bidirectional. |
| SMBJ5954B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-5% tolerance. |
