Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-68
R104G SFR201 1N5920B P6KE7.5C P4KE100C 3EZ7.5D2 1N5542C 1N4616D SMBJ5928C ZMM55-C8V2 1N5918 3EZ15D10 1N4735C MMBZ5254B SMAJ78C HER507 SFR156 3EZ110D5 1N5953A RC201 ZMM55-C13 SMAJ12 KBU802G P6KE11CA SMAJ7.5 P6KE11A ZMM5222D
Teil no | Hersteller | Application |
---|---|---|
GS1K | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 800V. |
FR303G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
UF4006 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.0 A. |
FR104G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
SFR201 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 2.0 A. |
1N5920B | JGD | 1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-5% tolerance. |
P6KE7.5C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V. Bidirectional. |
P4KE100C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
3EZ7.5D2 | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-2% tolerance. |
1N5542C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-2% tolerance. |
1N4616D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.2V. 1% tolerance. |
SMBJ5928C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 13 V. Test current 28.8 mA. +-2% tolerance. |
ZMM55-C8V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-5% tolerance. |
1N5918 | JGD | 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. +-20% tolerance. |
3EZ15D10 | JGD | 3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-10% tolerance. |
1N4735C | JGD | 1W zener diode. Nominal zener voltage 6.2V. 2% tolerance. |
MMBZ5254B | JGD | Surface mount zener diode. Nominal zener voltage 27.0V, test current 4.6mA. |
SMAJ78C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 78 V. Bidirectional. |
HER507 | JGD | 5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
SFR156 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current 1.5 A. |
3EZ110D5 | JGD | 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-5% tolerance. |
1N5953A | JGD | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
RC201 | JGD | Single phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 2 A. |
ZMM55-C13 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 12.4-14.1 V. Test current 5 mA. +-5% tolerance. |
SMAJ12 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. |
KBU802G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
P6KE11CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. Bidirectional. |
SMAJ7.5 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. |
P6KE11A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. |
ZMM5222D | JGD | Surface mount zener diode. Nominal zener voltage 2.5 V. Test current 20 mA. +-20% tolerance. |