| Teil no | Hersteller | Application |
|---|
| 2W10 | JGD | Single phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
| ZMM55-D10 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 9.4-10.6 V. Test current 5 mA. +-20% tolerance. |
| 1N5519A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
| HER106G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| 3EZ24D | JGD | 3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-20% tolerance. |
| 1N4731D | JGD | 1W zener diode. Nominal zener voltage 4.3V. 1% tolerance. |
| 1N967A | JGD | 0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-10% tolerance. |
| SMBJ5955C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance. |
| 3EZ22D5 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-5% tolerance. |
| FR207G | JGD | 2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| 1A4 | JGD | 1.0 A silicon rectifier. Max recurrent peak reverse voltage 400 V. |
| FS2J | JGD | 1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V. |
| 1N4123D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 39V. 1% tolerance. |
| 3EZ82D3 | JGD | 3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-3% tolerance. |
| 3EZ170D2 | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance. |
| FR106L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N964 | JGD | 0.5W, silicon zener diode. Zener voltage 13V. Test current 9.5mA. +-20% tolerance. |
| SMAJ58C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. Bidirectional. |
| S3D | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A. |
| ZMM55-C7V5 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.0-7.9 V. Test current 5 mA. +-5% tolerance. |
| 1N758C | JGD | 500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-2% tolerance. |
| SMAJ14A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. |
| ZMM55-A18 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 16.8-19.1 V. Test current 5 mA. +-1% tolerance. |
| P4KE300 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. |
| 1N968 | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-20% tolerance. |
| SMBJ5934C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-2% tolerance. |
| DF005G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. |
| SMBJ70CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 77.6 V (min), 86.0 V (max). Test current 1.0 mA. Bidirectional. |
| SMAJ110C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional. |
| KBPC810 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
