Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-54

SF14 1EZ130D5 1N5927A FR601G 6A8G KBPC300 1N5923 BY255 1N5944B ZMM55-D33 KBPC1002 KBPC602G ZMM5230D 1N4741 3EZ160D4 RB153G KBU608 ZMM5236B 1N4620 1N5943B SMAJ64A 3EZ91D1 SMAJ28A SMBJ170C P6KE8.2C 3EZ100D10 RB156G

JGD Datenblätter Katalog-54

Teil noHerstellerApplication
SF26 JGDSuper fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 2.0 A.
P6KE82CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional.
FR155G JGD1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V.
SF14 JGDSuper fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A.
1EZ130D5 JGD1 watt silicon zener diode. Nominal zener voltage 130V at 1.9mA.
1N5927A JGD1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-10% tolerance.
FR601G JGD6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V.
6A8G JGD6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 800 V.
KBPC300 JGDSingle phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
1N5923 JGD1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-20% tolerance.
BY255 JGD3.0 A silicon rectifier. Max recurrent peak reverse voltage 1300 V.
1N5944B JGD1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-5% tolerance.
ZMM55-D33 JGDSurface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-20% tolerance.
KBPC1002 JGDSingle phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
KBPC602G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V.
ZMM5230D JGDSurface mount zener diode. Nominal zener voltage 4.7 V. Test current 20 mA. +-20% tolerance.
1N4741 JGD1W zener diode. Nominal zener voltage 11V. 10% tolerance.
3EZ160D4 JGD3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-4% tolerance.
RB153G JGDMiniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V.
KBU608 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
ZMM5236B JGDSurface mount zener diode. Nominal zener voltage 7.5 V. Test current 20 mA. +-5% tolerance.
1N4620 JGD500mW low noise silicon zener diode. Nominal zener voltage 3.3V.
1N5943B JGD1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-5% tolerance.
SMAJ64A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V.
3EZ91D1 JGD3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-1% tolerance.
SMAJ28A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V.
SMBJ170C JGDSurface mount transient voltage suppressor. Breakdown voltage 189 V (min), 231 V (max). Test current 1.0 mA. Bidirectional.
P6KE8.2C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. Bidirectional.
3EZ100D10 JGD3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance.
RB156G JGDMiniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V.

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