Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-58
533A ZMM5233B KBP208 3EZ16D5 KBPC304 HER157G P6KE350A SMBJ90 SMAJ13A SMAJ43A SMAJ40CA 6A10G 3EZ100D1 SMBJ5949B SMAJ14C 3EZ22D2 SMAJ24 GS1G SMAJ17CA 1N749A 1N4372 SS15 1N5541D SMAJ8.0C 3EZ22D1 KBU604 SMBJ5921C SF12G
Teil no | Hersteller | Application |
---|---|---|
1N4763D | JGD | 1W zener diode. Nominal zener voltage 91V. 1% tolerance. |
ZMM5244B | JGD | Surface mount zener diode. Nominal zener voltage 14 V. Test current 9.0 mA. +-5% tolerance. |
1N5533A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-10% tolerance. |
ZMM5233B | JGD | Surface mount zener diode. Nominal zener voltage 6.0 V. Test current 20 mA. +-5% tolerance. |
KBP208 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
3EZ16D5 | JGD | 3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-5% tolerance. |
KBPC304 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. |
HER157G | JGD | 1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
P6KE350A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. |
SMBJ90 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 100 V (min), 122 V (max). Test current 1.0 mA. |
SMAJ13A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. |
SMAJ43A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. |
SMAJ40CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional. |
6A10G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 1000 V. |
3EZ100D1 | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
SMBJ5949B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 100 V. Test current 3.7 mA. +-5% tolerance. |
SMAJ14C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional. |
3EZ22D2 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-2% tolerance. |
SMAJ24 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. |
GS1G | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 400V. |
SMAJ17CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional. |
1N749A | JGD | 500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-5% tolerance. |
1N4372 | JGD | 500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-10% standard tolerance. |
SS15 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. |
1N5541D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-1% tolerance. |
SMAJ8.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional. |
3EZ22D1 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-1% tolerance. |
KBU604 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. |
SMBJ5921C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-2% tolerance. |
SF12G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |