Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-87

BJ60A GS1A 1N753D SMBJ5921D SMBJ5952A SMAJ9.0 P4KE110A UF4002G 6A05 1N979C 1N4007G SMBJ100C 3EZ120D2 1N4757D KBP106G 1N4005L SMAJ7.0A BAV70 ZMM55-A12 1N5818 1N5519D SMBJ110C HER106L SMAJ7.5C HA11G P6KE24C SMBJ5939 SF15

JGD Datenblätter Katalog-87

Teil noHerstellerApplication
ZMM5223A JGDSurface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-3% tolerance.
P6KE160A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V.
SMBJ60A JGDSurface mount transient voltage suppressor. Breakdown voltage 66.7 V (min), 73.7 V (max). Test current 1.0 mA.
GS1A JGD1.0A, surface mount rectifier. Max recurrent peak reverse voltage 50V.
1N753D JGD500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-1% tolerance.
SMBJ5921D JGD1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-1% tolerance.
SMBJ5952A JGD1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-10% tolerance.
SMAJ9.0 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V.
P4KE110A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V.
UF4002G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A.
6A05 JGD6.0 A silicon rectifier. Max recurrent peak reverse voltage 50 V.
1N979C JGD0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-2% tolerance.
1N4007G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V.
SMBJ100C JGDSurface mount transient voltage suppressor. Breakdown voltage 111 V (min), 136 V (max). Test current 1.0 mA. Bidirectional.
3EZ120D2 JGD3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-2% tolerance.
1N4757D JGD1W zener diode. Nominal zener voltage 51V. 1% tolerance.
KBP106G JGDSingle-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
1N4005L JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 600V.
SMAJ7.0A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V.
BAV70 JGDSurface mount switching diode. Max forward voltage 1.00V at 50mA.
ZMM55-A12 JGDSurface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-1% tolerance.
1N5818 JGD1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 30 V, max RMS voltage 21 V, max DC blocking voltage 30 V.
1N5519D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-1% tolerance.
SMBJ110C JGDSurface mount transient voltage suppressor. Breakdown voltage 122 V (min), 149 V (max). Test current 1.0 mA. Bidirectional.
HER106L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
SMAJ7.5C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. Bidirectional.
HA11G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V.
P6KE24C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. Bidirectional.
SMBJ5939 JGD1.5W silicon surface mount zener diode. Zener voltage 39 V. Test current 9.6 mA. +-20% tolerance.
SF15 JGDSuper fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A.

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