Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-95

39D2 FR204G ZMM55-C30 P4KE8.2A 1N4001G 1N4752 1N985B SMBJ5935C SMAJ33CA SMAJ18CA SMAJ40 SMBJ20 1N974 SMAJ40 3EZ91D 1N5529B P4KE36A MMBZ5246B ZMM55-D16 ZMM5224D 1N966 1N4729C SMAJ20 1N4729D P6KE250A ZMM5231A SMBJ5952D SMBJ8.0C

JGD Datenblätter Katalog-95

Teil noHerstellerApplication
ZMM5233D JGDSurface mount zener diode. Nominal zener voltage 6.0 V. Test current 20 mA. +-20% tolerance.
1N4112C JGD500mW low noise silicon zener diode. Nominal zener voltage 18V. 2% tolerance.
3EZ39D2 JGD3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-2% tolerance.
FR204G JGD2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V.
ZMM55-C30 JGDSurface mount zener diode, 500mW. Nominal zener voltage 28-32 V. Test current 5 mA. +-5% tolerance.
P4KE8.2A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V.
1N4001G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V.
1N4752 JGD1W zener diode. Nominal zener voltage 33V. 10% tolerance.
1N985B JGD0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-5% tolerance.
SMBJ5935C JGD1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-2% tolerance.
SMAJ33CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. Bidirectional.
SMAJ18CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. Bidirectional.
SMAJ40 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V.
SMBJ20 JGDSurface mount transient voltage suppressor. Breakdown voltage 22.2 V (min), 27.1 V (max). Test current 1.0 mA.
1N974 JGD0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-20% tolerance.
SMAJ40 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V.
3EZ91D JGD3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-20% tolerance.
1N5529B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance.
P4KE36A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V.
MMBZ5246B JGDSurface mount zener diode. Nominal zener voltage 16.0V, test current 7.8mA.
ZMM55-D16 JGDSurface mount zener diode, 500mW. Nominal zener voltage 15.3-17.1 V. Test current 5 mA. +-20% tolerance.
ZMM5224D JGDSurface mount zener diode. Nominal zener voltage 2.8 V. Test current 20 mA. +-20% tolerance.
1N966 JGD0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-20% tolerance.
1N4729C JGD1W zener diode. Nominal zener voltage 3.6V. 2% tolerance.
SMAJ20 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V.
1N4729D JGD1W zener diode. Nominal zener voltage 3.6V. 1% tolerance.
P6KE250A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V.
ZMM5231A JGDSurface mount zener diode. Nominal zener voltage 5.1 V. Test current 20 mA. +-3% tolerance.
SMBJ5952D JGD1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-1% tolerance.
SMBJ8.0C JGDSurface mount transient voltage suppressor. Breakdown voltage 8.89 V (min), 10.9 V (max). Test current 1.0 mA. Bidirectional.

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