Path:okDatasheet > Halbleiter Datenblatt > JGD Datenblatt > JGD-93

BJ5938 1N5518B SMBJ5934B 1N5939D SMAJ7.5CA MMBD1202 1N980C SFA16G 1N5925A SMBJ5952C 3EZ200D KBU1002G 1N4749C UF5407 3EZ13D10 SMBJ6.5C SMBJ16 SF11 HER108G 1N4751A 1N4762A ZMM5223B 1N4737C 3EZ170D3 1N4099D MMBZ5235B 1N4616 1N5951D

JGD Datenblätter Katalog-93

Teil noHerstellerApplication
SMAJ51C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. Bidirectional.
SMBJ5936C JGD1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-2% tolerance.
SMBJ5938 JGD1.5W silicon surface mount zener diode. Zener voltage 36 V. Test current 10.4 mA. +-20% tolerance.
1N5518B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance.
SMBJ5934B JGD1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-5% tolerance.
1N5939D JGD1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-1% tolerance.
SMAJ7.5CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. Bidirectional.
MMBD1202 JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
1N980C JGD0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. +-2% tolerance.
SFA16G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A.
1N5925A JGD1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-10% tolerance.
SMBJ5952C JGD1.5W silicon surface mount zener diode. Zener voltage 130 V. Test current 2.9 mA. +-2% tolerance.
3EZ200D JGD3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance.
KBU1002G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V.
1N4749C JGD1W zener diode. Nominal zener voltage 24V. 2% tolerance.
UF5407 JGDUltra fast rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 3.0 A.
3EZ13D10 JGD3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-10% tolerance.
SMBJ6.5C JGDSurface mount transient voltage suppressor. Breakdown voltage 7.22 V (min), 8.82 V (max). Test current 10.0 mA. Bidirectional.
SMBJ16 JGDSurface mount transient voltage suppressor. Breakdown voltage 17.8 V (min), 21.8 V (max). Test current 1.0 mA.
SF11 JGDSuper fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A.
HER108G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
1N4751A JGD1W zener diode. Zener voltage 30V.
1N4762A JGD1W zener diode. Zener voltage 82V.
ZMM5223B JGDSurface mount zener diode. Nominal zener voltage 2.7 V. Test current 20 mA. +-5% tolerance.
1N4737C JGD1W zener diode. Nominal zener voltage 7.5V. 2% tolerance.
3EZ170D3 JGD3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-3% tolerance.
1N4099D JGD500mW low noise silicon zener diode. Nominal zener voltage 6.8V. 1% tolerance.
MMBZ5235B JGDSurface mount zener diode. Nominal zener voltage 6.8V, test current 20.0mA.
1N4616 JGD500mW low noise silicon zener diode. Nominal zener voltage 2.2V.
1N5951D JGD1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance.

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