Path:OKDatasheet > Halbleiter Datenblatt > ST Microelectronics Datenblatt > IRF840F1
IRF840F1 spec: N-channel HEXFET, 500V, 4.5A
Ähnliche IRF840F1
- IRF820
- N-channel enhancement mode power MOS transistor, 500V, 3.0A
- IRF820
- N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET
- IRF820FI
- N-channel enhancement mode power MOS transistor, 500V, 2.2A
- IRF821
- N-channel MOSFET, 450V, 2.5A
- IRF821FI
- N-channel MOSFET, 450V, 2.0A
- IRF822
- N-channel enhancement mode power MOS transistor, 500V, 2.8A
- IRF822FI
- N-channel enhancement mode power MOS transistor, 500V, 1.9A
- IRF823
- "N-channel MOSFET, 450V, 2.2A"
IRF840F1 Datenblatt und Spezifikationen
Hersteller : ST Microelectronics
Verpacken : ISOWATT220
Pins : 3
Temperatur : Min -65 °C | Max 150 °C
Größe : 367 KB
Application : N-channel HEXFET, 500V, 4.5A
IRF840F1 PDF-Download