Path:OKDatasheet > Halbleiter Datenblatt > PanJit Datenblatt
Stichwort: PanJit Datenblatt, PanJit Datasheet, PanJit Data Sheet, PanJit Datenblätter, PanJit Semiconductors
Path:OKDatasheet > Halbleiter Datenblatt > PanJit Datenblatt
Stichwort: PanJit Datenblatt, PanJit Datasheet, PanJit Data Sheet, PanJit Datenblätter, PanJit Semiconductors
Um den spezifischen PanJit SemiconductorsDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit PanJit Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
PanJit offizielle Webseite
Teil no | Application |
---|---|
SB130 | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. |
PS104RS | Fast switching plastic diode. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
GBU4G | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified output current at Tc=100degC 4.0 A, at Ta=40degC 3.0 A. |
SA10 | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 10.00V, Vbr(min/max) = 11.10/14.10V, It = 1 mA. |
P4KE20 | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 16.20V, Vbr(min/max) = 18.00/22.00V, It = 1mA. |
1.5SMCJ6.0A | 1500 W peak power pulse surfase mount transient voltage suppressor. Vrwm = 6.0V, Vbr(min/max) = 6.67/7.67V, @ It = 10mA; Ir = 1000uA (@ Vrwm); Vc = 10.3V @ Ipp = 145.6A. |
P4SMAJ200 | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 200 V. Breakdown voltage(min/max) 220/282.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 358 V. Peak pulse current 1.1 A. |
MMBZ5245B | Surface mount silicon zener diode. Nominal zener voltage Vz = 15 V @ Izt. 500 mWatts zener diode. |
SB2020FCT | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 20.0 V. Max average forward rectified current at Tc = 90degC 20.0 A. |
3.0SMCJ24 | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 24 V. Vbr(max/min) = 26.7/33.8 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 43.0 V @ Ipp = 69.8 A. |
SD530YT | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 5 A. |
PS151R | Fast switching plastic rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.5 A. |
BZT52-C27 | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 27 V @ Iz = 5 mA. |
P4SMAJ22C | Surfase mount transient voltage suppressor. Reverse stand-off voltage 22 V. Breakdown voltage(min/max) 24.4/30.9 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 39.4 V. Peak pulse current 10.1 A. |
DI151 | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current (Ta=40degC) 1.5A. |
SB2030FCT | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 30.0 V. Max average forward rectified current at Tc = 90degC 20.0 A. |
KBU4J | Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 600 V. Max average forward rectified output current at Tc = 100degC 4.0 A, at Ta = 40degC 4.0 A. |
1.5SMCJ180A | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 180V; Vbr(min/max) = 198/230.4V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 292V, @ Ipp = 5.1A |
SB20100CT | Schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 90degC 20.0 A. |
1S10 | 1 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. |
ER306 | Superfast recovery rectifier. Max recurrent peak reverse voltage 600V. Max average forward current 3.0 A. |
ED304YT | Super fast recovery rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current (Tc=75degC) 3.0A. |
GBL402 | Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
SS0530 | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current at Ta = 25degC 0.5 A. |
1SMB3EZ15 | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 15 V. Test current Izt = 50 mA |
GBU8A | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
SA75 | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 75.00V, Vbr(min/max) = 83.30/105.70V, It = 1 mA. |
SD103CW | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Ta = 25degC 0.35 A. |
Founded in 1986, Panjit International has continued to expand it's product portfolio and manufacturing capabilities. Through the years greater and greater emphasis on quality has earned quality and environmental certifications as well as numerous supplier quality awards. PanJit conforms to various Hazardous Substances (RoHS) standards as well.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114